K1S2816BCM memory equivalent, 8mx16 bit page mode uni-transistor random access memory.
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UtRAM
GENERAL DESCRIPTION
The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device s.
The K1S2816BCM is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device al.
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